Transphorm Strengthens 900 V GaN Portfolio with Second FET - Transphorm
New Generation III GaN-on-Si FETs Capable of Powering Three-phase Broad Industrial Power Supplies and Automotive Converters Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today introduced its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN product line. These devices […]
GaN Revolution - Transphorm
Impact of an Underlying 2DEG on the Performance of a p-Channel
Interview with Philip Zuk from Transphorm
Phase Engineering and Synchrotron-Based Study on Two-Dimensional
GaN-Based Lateral and Vertical Devices
900V 170mΩ Gallium Nitride (GaN) FET - Transphorm
APEC 2019: GaN Systems showcases latest wares
Cells December-2 2023 - Browse Articles
TP90H050WS 900 V 50 mΩ GaN FET - Transphorm
Transphorm Strengthens 900 V GaN Portfolio with Second FET
GaN-Based Lateral and Vertical Devices